20 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...
Tags: GaN/Si HEMTs, IEMN, AlGaN
Specialty foundry TowerJazz(which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek,Israel,and at its subsidiaries Jazz Semiconductor Inc in Newport Beach,CA,USA and TowerJazz Japan Ltd)and Phasor Solutions Ltd of ...
Tags: TowerJazz, SiGe, BiCMOS, Satellite Communications
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE
RF Micro Devices Inc of Greensboro,NC,USA has launched four monolithic microwave integrated circuit(MMIC)upconverter and downconverter devices,offering high performance and low cost for high-frequency applications,it is claimed. The ...
Tags: RFMD, I/Q converters, 17-27GHz applications, MMIC
Millitech Inc of Northampton,MA,USA,a Smiths Interconnect business that designs and manufactures millimeter-wave components,assemblies and fully integrated antenna positioning systems for satellite communications,radar,passive imaging,space ...
Tags: GaN, Millitech, millimeter-wave components, E-band(WR-12)models
The Solar Electric Light Fund (SELF) is announcing that a case study about its successful installation of 29 kilowatts of off-grid photovoltaic (PV) systems to provide electricity to the Thomonde Hospital in Haiti is available online from ...
Tags: Market View, SOLAR
The Solar Electric Light Fund (SELF) is announcing that a case study about its successful installation of 29 kilowatts of off-grid photovoltaic (PV) systems to provide electricity to the Thomonde Hospital in Haiti is available online from ...
Tags: SOLAR