University of Arkansas researchers are working on a promising new material to create more efficient photovoltaic solar cells to be used in space missions. Shui-Qing 'Fisher' Yu, associate professor of electrical engineering, will serve as ...
Tags: photoconductors, solar cell, SiGeSn
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has published a handbook, 'DC-DC ...
Jules Verne said in Around the World in 80 Days: “Anything one man can imagine, other men can make real.” Today, that is truer than ever before. Did you ever think it would be possible to communicate so easily with anyone around ...
Tags: LED streetlights, LED lighting
South Korean LED maker Seoul Semiconductor is to mass produce its Wicop (Wafer Level Integrated Chip on PCB) LEDs for use in lamps. Designed to directly connect the chip to the PCB, Wicop does not require the packaging processes, such as ...
Tags: LED, CSP, Semiconductor
Bosch is planning to introduce a new battery technology based on solid state cells for electric cars with the help of its recently acquired company Seeo. The company said that it has knowledge and exclusive patents for solid-state ...
Tags: Bosch, Seeo, electric cars, lithium-ion battery
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is displaying its new GS66540C 650V 100A high-current GaN power ...
The high-frequency radar chip team at Infineon Technologies AG of Munich, Germany has been nominated for the Deutscher Zukunftspreis 2015 (German Future Award), the German President's Award for Innovation in Science and Technology. Radar ...
Moissanite maker Charles & Colvard Ltd. recently introduced its first colorless (D, E, and F grade) moissanite stones. The stones are part of a new collection called Forever One, which joins the company’s Forever Brilliant ...
Tags: moissanite stones, meteors
In booth #240 at European Microwave Week (EuMW) 2015 in Paris, France (6–11 September), Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors ...
In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide ...
Tags: EuMW 2015, GaN-on-silicon, GaN-on-SiC, PA
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has announced that the MAGX-100027-100C0P, a wideband ...
At European Microwave Week (EuMW 2015) in Paris, France (8–10 September), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and ...
Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs) [Tetsuya Miyazawa et al, J. Appl. Phys., vol118, p085702, ...
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
The gallium nitride (GaN) substrate market will grow from $2.2bn in 2014 to more than $4bn by 2020, forecasts research and consulting firm IndustryARC in the report 'Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on ...
Tags: Diameters, GaN Substrate Market