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Monolith Makes Availability 1200V SiC Schottky Engineering Samples

Oct 12, 2016

Monolith Semiconductor Inc of Round Rock, TX, USA has announced the availability of engineering samples of 1200V, 5A and 10A silicon carbide (SiC) Schottky diodes in a TO-220 package. Manufactured in the 150mm SiC foundry of X-FAB Texas, ...

Tags: Monolith Semiconductor Inc, 1200V SiC Schottky

Panasonic Develops GaN Diodes with High-Current Operations and Low Turn-on Voltage

Oct 12, 2015

Panasonic Corp of Osaka, Japan says that it has developed gallium nitride (GaN) diodes that can not only operate at a high current of 7.6kA/cm2 - four times greater than that tolerated by conventional silicon carbide (SiC) diodes with a ...

Tags: Panasonic, GaN Diodes

Researchers Claimed Record High Breakdown Voltage for Aluminium Gallium Nitride

Mar 26, 2015

Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...

Tags: silicon diodes, GaN substrates

Toshiba Corp's Expanded Its Family of 650V Silicon Carbide Schottky Barrier Diodes

Jun 4, 2014

Toshiba Corp’s Semiconductor & Storage Products Company has expanded its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBDs) with the addition of insulated TO-220F-2L packaged products. Mass production shipment has ...

Tags: Toshiba, Semiconductor, Storage Products

Toshiba Is Expanding Its Family of 650V SiC Schottky Barrier Diodes

Oct 28, 2013

With analysts predicting significant growth in the silicon carbide (SiC) power device market, in order to meet an anticipated spike in demand Japan’s Toshiba is expanding its family of 650V SiC Schottky barrier diodes (SBD). The ...

Tags: Toshiba, SiC Schottky

Toshiba Started Volume Production of SiC Power Devices

Apr 15, 2013

In anticipation of growing demand for industrial and automotive applications, Japan’s Toshiba Corp has started volume production of silicon carbide (SiC) power devices at its Himeji Operations–Semiconductor plant in Hyogo ...

Tags: SiC Power Devices, Toshiba

GeneSIC Semiconductor Has Announced The Immediate Availability of Its GB100XCP12-227

Mar 7, 2013

Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the immediate availability of its GB100XCP12-227 second-generation hybrid mini-modules using 1200V/100A SiC Schottky rectifiers ...

Tags: semiconductor supplier, semiconductor, silicon

KIT Succeeded in Manufacturing Silicon-Based Light-Emitting Diodes

Mar 4, 2013

ilicon nanocrystals have a size of a few nanometers and possess a high luminous potential. Scientists of KIT and the University of Toronto/Canada have now succeeded in manufacturing silicon-based light-emitting diodes (SiLEDs). They are ...

Tags: KIT, Light, Silicon Nanocrystal LEDs

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