RF Micro Devices Inc of Greensboro,NC,USA has launched the RFHA1006,a wideband power amplifier designed for continuous-wave(CW)and pulsed applications including:class AB operation for public mobile radio;power amplifier stages for commercial wireless infrastructure;general-purpose Tx amplification;test instrumentation;two-way radios;and civilian and military radar.
Using a high-power-density gallium nitride(GaN)HEMT process,the amplifier achieves high power-added efficiency(PAE=60%),flat gain(of 16dB),and large instantaneous bandwidth(225-1215MHz)in a single amplifier design.The input-matched GaN transistor is packaged in an air-cavity ceramic package for what is claimed to be excellent thermal stability through the use of advanced heat-sink and power dissipation technologies.
Ease of integration is accomplished through the incorporation of an optimized 50Ωinput-matching network within the package that provides wideband gain and power performance in a single amplifier.An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.
Operating from a 28V supply,output power is typically 9W(39.5dBm).The operating temperature is-40°C to 85°C.Large-signal models are available.
