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Aug 3, 2017
Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of ...
Aug 1, 2017
Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. 25, p16754, ...
Aug 1, 2017
China has targeted installing 86.5GW PV capacity during 2017-2020 under the 13th Five-Year National Development Plan, including 54.5GW for ground-mounted PV projects and 32GW, or 8GW a year, for PV projects under the "Top Runner Program," ...
Mar 21, 2017
The global solar market has yet to show signs of turnaround after going through the turbulent 2016. The latest Gold Member Solar Report by EnergyTrend, a division of TrendForce, forecasts that the global PV demand for 2017 will total just ...
Sep 9, 2014
Meijo and Nagoya universities in Japan have developed a laser lift-off (LLO) technique for removing gallium nitride (GaN) substrates from ultraviolet (UV) light-emitting diodes (LEDs) to improve light extraction efficiency [Daisuke Iida et ...
Apr 13, 2017
Naura Technology (formerly Beijing Sevenstar Electronics) has started shipping ion etch equipment for the manufacture of 14nm chips to chipmakers, while Advanced Micro-Fabrication Equipment (AMEC) is being engaged in the development of etch ...