Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, on 3 September (at 11am-12pm EDT), its VP of applications engineering Dr Johan Strydom is presenting ‘Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters’, a free one-hour webinar sponsored by the Institute of Electrical and Electronics Engineers (IEEE) Power Electronics Society (PELS), discussing the contribution of GaN power transistors to meet the demanding system bandwidth requirements of envelope tracking applications.
Discrete GaN power devices offer superior hard-switching performance over MOSFETs and are crucial for the development of switching converters for envelope tracking, says EPC. In the seminar, the latest family of high-frequency eGaN FETs will be presented in a few multi-megahertz buck converters. The different system-level parasitics will be discussed and their impact evaluated based upon the experimental results.
As an expert on the application of GaN transistors in envelope tracking power circuit design, Strydom is widely published in the industry, including being co-author of ‘GaN Transistors for Efficient Power Conversion’, the first textbook on the design and applications of GaN transistors.
