Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA is to showcase its latest power management solutions at the Applied Power Electronics Conference and Exposition (APEC 2013) at Long Beach Convention Center, California (17-21 March).
IR will give demonstrations of its GaNpowIR power device technology platform, which is based on proprietary gallium nitride-on-silicon (GaN-on-Si) epitaxy.
In addition, the firm’s power management experts will participate in the following conference events:
Tuesday, 19 March
Industry Session: IS1.1.1 (8.30am–12noon) - ‘GaN Based Power Conversion: Moving On’, presented by Tim McDonald, vice president, emerging technologies. Exhibitor Session: 3 (3-3.30pm) - ‘The Status of GaNpowIR Device Developments at IR’, presented by Dr Michael Briere of ACOO Enterprises LLC, on behalf of International Rectifier. Rap Session: 2 (5–6.30pm) - ‘Wide band-gap semiconductors - Primetime or Promises?’, presented by Tim McDonald.
Wednesday, 20 March
Technical Session: T15 (in Room 1 at 2pm) - ‘Wide Gap/Hi Freq/Hi Density DC-DC Converters’, co-chaired by Amir Rahimi, senior systems/applications engineer.
