Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers and III-V epiwafers, and Intelligent Epitaxy Technology Inc (IntelliEPI) of Richardson, TX, USA, which uses molecular beam epitaxy (MBE) to manufacture indium phosphide (InP), gallium arsenide (GaAs) and gallium antimonide (GaSb) epiwafers, have signed a collaborative agreement to serve the GaAs market.
The partnership aims to address market requirements for a reliable second source, while also extending the position of both firms in the GaAs market as well as delivering the best product at the lowest cost. The agreement includes a technology license granted by Soitec to IntelliEPI, which may be extended to address future business opportunities in the GaAs market, including equipment transfer.
"We are delighted to announce the license of our technology, leading to a second source for our products for our key GaAs customers ," says Bernard Aspar, senior VP & Soitec's Communication & Power business unit general manager.
"This collaborative agreement will reinforce our GaAs technology and product know-how while, at the same time, offering Soitec's customers supply-chain security," adds IntelliEPI's president & CEO Yung-Chung Kao.
