IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands, which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications, has announced availability of its IXFN50N120SK and IXFN70N120SK 1200V silicon carbide (SiC) MOSFETs in SOT-227 packages.
IXYS says that the additions to its SiC MOSFET portfolio enable higher-power applications for SiC-based products in switching and control for high-efficiency DC-DC solar inverters, uninterruptible power supplies (UPS) systems and rapid-charger solutions. "One key aspect of the devices is using our matching assembly technology to harvest the full advantage of the IXYS' SiC power MOSFET," says Dr Elmar Wisotzki, director of technology for IXYS Germany. "IXYS also offers the best driver ICs for such high-power MOSFETs; thus we offer the total solution to our customers, to improve efficiency at best performance-over-cost ratio," he claims.
The IXFN50N120SK and IXFN70N120SK SiC MOSFETs have on-resistance of 40mΩ and 25mΩ (typical), respectively, with a 1200V blocking voltage in a MiniBLOC (SOT-227) package featuring 3kV isolation to heat-sink and what is claimed to be an outstanding low thermal impedance. The 'cool' solution is based on heat-spreading technology before isolation and the usage of AlN substrate as isolator to further enhance thermal performance and allow optimized cooling of SiC dies operated at high power densities. Both new products provide a real Kelvin gate connection for optimized gate control.
Additional features include very low gate charge for easy drive, a fast body diode, low input and output capacities, and a positive temperature coefficient supporting paralleling options for higher-power applications.
