Hittite Microwave Corp of Chelmsford, MA, USA (which designs and supplies analog, digital and mixed-signal RF, microwave and millimeter-wave ICs, modules and subsystems as well as instrumentation) has launched a power amplifier (PA) suitable for high-linearity point-to-point and point-to-multi-point radios, VSAT and SatCom applications.
The HMC7229LS6 is a four-stage gallium arsenide (GaAs) pHEMT monolithic microwave integrated circuit (MMIC) power amplifier with an integrated temperature-compensated on-chip power detector. Operating at 37-40GHz, it is suitable for covering the 38GHz licensed microwave radio band, providing 24dB of gain and +31.5 P1dBm output power while drawing 1200mA from a +6V DC supply. With an OIP3 of +40dBm, the HMC7229LS6 also suits linear applications such as high-capacity point-to-point or multi-point radios or VSAT and SatCom applications demanding +32dBm of efficient saturated output power.
The HMC7229LS6 is housed in a ceramic RoHS-compliant 6mm x 6mm QFN leadless air-cavity package that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques. The RF I/Os are internally matched and DC blocked for ease of integration into higher level assemblies.
The new device complements Hittite's line of power amplifiers, which provide frequency coverage for all of the licensed microwave radio bands from 6GHz to 86GHz. Samples are available from stock.
