With analysts predicting significant growth in the silicon carbide (SiC) power device market, in order to meet an anticipated spike in demand Japan’s Toshiba is expanding its family of 650V SiC Schottky barrier diodes (SBD). The TRS6E65C, TRS8E65C and TRS10E65C are 6, 8 and 10A devices, respectively, joining Toshiba’s 12A TRS12E65C device, which entered volume production in second-quarter 2013.
Low forward voltage drop and a very fast switching action make the SBDs suit applications including power conditioners for photovoltaic power generation systems, solar inverters, uninterruptible power supplies (UPS) and DC-DC converters. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are much more efficient.
SiC power devices offer more stable operation than current silicon devices - even at high voltages and currents - as they significantly reduce heat dissipation during operation, says Toshiba. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters and trains to automotive systems.
Toshiba’s Schottky barrier diode range features a maximum reverse recovery current (IRRM) of 90 microamperes at 650V. All devices are housed in 2-pin TO-220 packages, with additional packages scheduled to be added in future.
Toshiba's new 650V SBDs are available now. Budgetary pricing begins at $3.00(for a 6A device), with volume discounts available.
