Vishay Intertechnology, Inc. VSH +0.23% today announced that it will be exhibiting its latest semiconductors and passive components in booth 1C-205 at Power System Japan, a focused exhibition on power systems at Techno-Frontier 2014, being held at the Tokyo Big Sight from July 23 to 25, 2014.
A component solutions provider for connectivity, mobility, and sustainability, Vishay will highlight industry-leading innovations — including passive components, diodes, power MOSFETs, and optoelectronics — that provide increased efficiency and reliability for a wide range of applications.
To address the increasing demands associated with automotive designs, specifically in powertrain and hybrid vehicle applications, Vishay Siliconix will showcase its low-profile, high-power-densityA figure of merit usually expressed in Joules per cubic inch for capacitors AEC-Q101-qualified SQ Series MOSFETs in a wide range of packages. Optimized for automotive excellence, SQ Series devices are produced using a special process flow in fabrication and assembly to reduce defects. Featuring low on-resistance n- and p-channel TrenchFET technologies, the MOSFETs are rated for a maximum junction temperature of +175 °C and offer a rugged silicon design. Also featured will be Vishay Siliconix DrMOS solutions and analog switches.
For automotive and solar inverter applications, Vishay will be featuring diodes in a variety of low-profile packages, including 45 V to 120 V TMBS Trench MOS Barrier Schottky rectifiers in the SMPA (DO-221BC) and SMPD (TO-263AC) packages, and FRED Pt ultrafast recovery rectifiers in the SlimSMA (DO-221AC) and SMF (DO-219AB) packages. In addition, power modules in the EMIPAK-2B package featuring solderless pressfit technology will be on display.
Vishay will also highlight optoelectronics products for MRI machines, computer servers, and alternative energy and industrial applications. Devices on display will consist of 5 MBd high-speed optocouplers, matched infrared emitters and phototransistors, high-brightness 0603 ChipLEDs, 2.5 A IGBT and MOSFET drivers, and solid-state relays.