Plextek RF Integration of Great Chesterford, near Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, says that its CEO Liam Devlin is presenting the paper 'Designing GaN PA MMICs' in the Microwave, RF and Millimetre Wave Modelling & Circuit Design Seminar at the UK's University of Manchester on 17 June (sponsored by Keysight Technologies).
At the seminar, delegates can hear the experiences of industry experts engaged in the key stages of RF, microwave and millimetre-wave design flow, from semiconductor device measurement and model extraction, through to circuit design and packaging.
Devlin's presentation will explain how the high breakdown voltage and operating temperature capability of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) make the technology well suited to the realization of power amplifiers (PAs). Many commercial GaN foundry processes are now available, and the realization of custom GaN PA monolithic microwave integrated circuits (MMICs) is now a practical option for many applications, says Plextek RFI.
Devlin's presentation starts with an overview of the structure and operation of a GaN HEMT and then explains how to design a GaN PA MMIC. Design examples will then be presented for a range of applications using several different commercially available GaN processes.
Other speakers at the seminar include Rob Sloan of University of Manchester, Cedric Pujol and Dave Morris of Keysight, Philippe Michel of UMS, Peter King of IDEAL Networks, and Christopher Buck of Filtronic.
