GaN Systems Inc of Ottawa, Ontario, Canada has signed an agreement for Ecomal Europe to promote and distribute its gallium nitride (GaN)-based high-power switching transistors.
GaN Systems' gallium nitride power transistors are based on its proprietary Island Technology and offer what are claimed to be significant advantages over traditional silicon MOSFETs and IGBTs for smaller, lighter and more efficient power electronics. Ecomal Europe was selected for its expertise in power systems and complementary line-cards.
The partnership is seen as being synergistic. Many of GaN Systems' prospective customers in the region already have a relationship with Ecomal Europe, which has technical knowledge in applications particularly suited to GaN high-power switching devices, including inverters, UPS (uninterruptible power supplies), hybrid electric vehicles/electric vehicles (HEV/EV) and high-voltage DC-DC conversion.
GaN Systems claims to be the first company to have developed and brought to the global market a comprehensive product range of devices with current ratings from 8A to 250A – its Island Technology die design, combined with its low-inductance and thermally efficient GaNPX packaging and Drive Assist technology, means the its GaN transistors offer a 40-fold improvement in switching and conduction performance over traditional silicon MOSFETs and IGBTs, it is reckoned.
"Gallium nitride devices are recognised to be the future of power electronics and, as our product portfolio is now ready for commercialization, it's both key and timely for us to continue to build our worldwide distribution network," says president Girvan Patterson.
