Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has published a handbook, 'DC-DC Conversion: A Supplement to GaN Transistors for Efficient Power Conversion' (by Dr David Reusch and Dr John Glaser), as a practical engineering guide showing how to achieve increased efficiency and power density in datacom equipment and other power conversion applications using GaN power transistors.
The book addresses how power conversion systems will continue to improve in order to keep pace with the rapid improvements in computing power and the need for efficient data centers. With a focus on the use of high-performance GaN technology, the DC-DC handbook goes through step-by-step analysis of how to create power conversion solutions using GaN devices. The analysis makes direct performance comparisons with state-of-the-art silicon power transistors traditionally used in power conversion systems.
Also, combining the discussion of power conversion systems architectures and the superior performance of GaN technology, the book introduces a new power delivery architecture that takes advantage of the superior performance attributes of GaN – showing the increased power density that can be achieved with high-frequency switching.
