RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has introduced what are claimed to be the industry’s highest thermal and wideband performance GaN device with a 125W continuous wave (CW) gallium nitride on silicon carbide (GaN-on-SiC) transistor. By offering extended operational bandwidth, the new MMRF5014H is suitable for wideband amplifiers in scientific equipment, as well as in military communications products for the US defense sector including jammers, radar implementations and electronic warfare (EW) systems.
Performance of 100W CW power over 200-2500MHz bandwidth with greater than 12dB gain across the band is demonstrated in the available reference circuit. The transistor is designed to deliver 58% efficiency and to achieve power levels in excess of 125W in narrower-band applications. In addition, the device delivers thermal performance of less than 1° C/W and offers VSWR (voltage standing wave ratio) ruggedness of 20:1.
The new GaN product is the first of several that Freescale plans to introduce to help push existing performance while addressing the stringent size, weight and power (SWaP) requirements of the defense industry and other markets.
“Radios today typically require multiple RF amplifiers to cover a wide frequency spectrum, but with the new MMRF5014H, only one is needed,” says Paul Hart, senior VP & general manager of Freescale’s RF group. “Size, weight and power upgrades are critical for our customers, and by replacing several amplifiers with a single device, the MMRF5014H helps across all three of these factors.”
The MMRF5014H is included in Freescale’s Product Longevity Program, as are other RF products in the military portfolio.
Also, Freescale’s military RF products are supported by a dedicated team of experts to assist users through all stages of device selection, implementation and system development.
Samples and evaluation circuits for the MMRF5014H transistor are available now.
