Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride (GaN)-based RF power transistors for the defense, communications, broadband, and industrial & scientific markets, has named David W. Runton as its new VP of engineering.
Runton has almost 20 years of RF power semiconductor experience, with six years in GaN-specific product development, including design, assembly, qualification and packaging.
Picture: Nitronex’s new VP of engineering David W. Runton.
“Nitronex has very compelling technology that I feel has advantages for numerous market applications,” says Runton. Founded in 1999, the firm provides gallium nitride on silicon (GaN-on-Si) semiconductor solutions using its proprietary SIGANTIC manufacturing process, which combines the power, efficiency and bandwidth performance of GaN with the reliability, ease of use and low-cost advantages of industry-standard silicon substrates. “I am joining Nitronex at an exciting time with a new owner, management team, and significant growth plans for the future,” he adds. Nitronex was acquired last June by Silicon Valley-based Gaas Labs LLC, a private investment fund targeting the communications semiconductor market.
Runton was most recently director of High Power Engineering for RF Micro Devices Inc of Greensboro, NC, USA, where he led an engineering product release team and developed long-term product strategy. He has also held engineering leadership positions at Freescale and Motorola Semiconductor.
“I’m confident he will help us leverage our core technology in the RF power market,” says president & CEO Greg Baker. “He has an extensive background developing LDMOS and GaN power devices and a proven track record leading engineering teams to develop new products and technologies.”
Runton holds both a Bachelor Degree and a Master of Science degree in Electrical Engineering from the Georgia Institute of Technology as well as a Masters in Business Administration, High Technology Program from Arizona State University.
