LayTec AG of Berlin, Germany, which makes in-situ metrology systems for thin-film processes focusing on compound semiconductor and photovoltaic applications, says that Epistar Corp (Taiwan's largest LED chipmaker) has qualified the Pyro 400 in-situ metrology system for its gallium nitride (GaN) LED production. Epistar will now use high-accuracy GaN surface temperature sensing with Pyro 400.
"We are satisfied with GaN surface temperature measurement provided by Pyro 400," comments the head of the Epitaxy Engineering Division at Epistar. "The tool helps us further improve MOCVD [metal-organic chemical vapour deposition] controllability and LED production yield," he adds.
"We thank the team at Epistar for working together with LayTec's application engineers so closely," comments Tom Thieme, LayTec's director marketing & sales. "Through collaboration with this important and innovative customer, we have established our UV pyrometry tool in Epistar's daily LED production application," he adds. "We successfully demonstrated that precise wafer surface temperature control gives room for even further LED yield improvement and cost reduction."
The Pyro 400 metrology system controls the real GaN surface temperature during epitaxial growth on infrared transparent substrates such as sapphire or silicon carbide (SiC). The tool applies ultraviolet pyrometry and provides information on the final emission wavelength of the LED already during epitaxial growth.
