Analog semiconductor maker Skyworks Solutions Inc of Woburn, MA, USA has launched a 0.7-1.2GHz, single-die cascode gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise amplifier (LNA) for cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters, and base stations.
The SKY67111-396LF offers very low noise figure and high linearity along with what is claimed to be excellent return loss and gain flatness in a small 2mm x 2mm, no lead plastic package. On-die active bias design of the new LNA ensures consistent performance and enables unconditional stability with a 5V supply, says the firm. The rugged cascode design achieves nearly 19dBm IIP3, 0.5dB noise figure, and >20 dBgain. The bias circuit allows the device current to be set independently from the Vdd supply, enabling optimal efficiency for a wide range of applications.
Skyworks says that the amplifier is suitable for wireless infrastructure OEMs having receiver applications that require highly efficient amplification with high gain and flat gain response. In addition, its linearity makes the part a suitable linear amplifier for transmitter applications.
