At the IEEE MTT-S International Microwave Symposium (IMS 2015) in Phoenix, AZ (19-21 May), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...
Tags: Power Transistor, Linear Operation
Avago Technologies Ltd (a supplier of III-V-based analog interface components for wireless, wireline, storage and industrial applications) has launched the ALM-2203 miniature highly integrated low-noise amplifier (LNA)-filter RFIC module, ...
Tags: LNA-Filter Module, Car Radio
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched the latest addition to its range of enhancement-mode ...
Tags: GaN Systems, Power electronics
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has expanded its portfolio of RF switches with a suite of analog control ICs for a variety of Internet of Things applications including ...
Tags: Skyworks, switching technologies
North Carolina State University in the USA has developed a new edge termination technique for 4H polytype silicon carbide (4H-SiC) high-voltage devices [Woongje Sung et al, IEEE Electron Device Letters, published online 29 April 2015]. The ...
Cree Inc of Durham, NC, USA has launched two gallium nitride (GaN) high-electron-mobility transistor (HEMT) RF devices that are said to solve a number of long-standing issues for radar systems employing traditional travelling wave tube ...
Tags: GaN HEMTs, TWT Amplifiers
In booth #1348 at the 2015 IEEE MTT-S International Microwave Symposium & Exhibition (IMS 2015) in Phoenix, Arizona (17-22 May), Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated ...
Tags: Microsemi, Microwave Devices
Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...
Tags: plastic fiber, Electronics
Researchers in Korea and USA have developed sidewall emission-enhanced (SEE) deep ultraviolet (DUV) light-emitting diodes (LEDs) to improve light extraction efficiency DUV LEDs with wavelengths less than 300nm become very inefficient due ...
Tags: Light-Emitting Diodes, LEDs
Korea Institute of Science and Technology has presented what it says is the first demonstration of indium gallium arsenide on-insulator (In0.53Ga0.47As-OI) transistors with a buried yttrium oxide (Y2O3 BOX) layer [SangHyeon Kim et al, IEEE ...
At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), ON Semiconductor of Phoenix, AZ, USA (which supplies silicon-based power and signal management, logic, discrete and custom devices for ...
Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...
Tags: GaN-on-Si, Power Electronics, LEDs
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching transistors based on its proprietary Island Technology for power conversion and control applications, has signed an agreement with ...
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical