Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
Tokyo-based Mitsubishi Electric Corp has launched the new PSF15S92F6 15A/600V transfer-mold power semiconductor model in its lineup of super-mini dual-in-line package intelligent power modules (DIPIPM), with embedded silicon carbide ...
A group of Texas Tech University researchers led by professors Hongxing Jiang and Jingyu Lin has developed hexagonal boron nitride semiconductor as a possible low-cost alternative to helium gas detectors in neutron detection ('Realization ...
Privately held integrated optical communications component and sub-system developer ColorChip of Yokneam, Israel has raised $20m in new growth funding to ramp-up operations and drive an accelerated product roadmap. The funding is in ...
Tags: Optical transceivers, ColorChip, PICs
Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...
Chinese manufacturers technology have advanced in the past year to result in large GaN price fluctuations, and have entered III-V EPI-wafer synthesizing industry to build a comprehensive IoT and telecommunication supply chain in the ...
Tags: GaN Technology, LED manufacturer
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination
Anokiwave Inc of San Diego, CA, USA, which provides highly integrated silicon core chips and III-V front-end integrated circuits for millimeter-wave (mmW) markets and active electronically scanned array (AESA)-based terminals, has added to ...
Tags: Anokiwave, Asia-Pacific region, appointment
For second-quarter 2016, Rubicon Technology Inc of Bensenville, IL, USA (which makes monocrystalline sapphire substrates and products for the LED, semiconductor and optical industries) has reported revenue of $3.5m, down on $4.3m last ...
At the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) in Nagoya, Japan (7-12 August), analytical and imaging instrument maker Nanophoton Corp of Osaka, Japan has introduced the RAMANdrive wafer analyzer for a wide ...
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
Tags: POET
South Korean UV LED and blue LED chip maker Seoul Viosys Co Ltd has filed a lawsuit with the Federal District Court of Southern New York accusing P3 International (a US-based manufacturer of home electronics products that sells its products ...
Tags: UV LEDs, Seoul Viosys, Electronic Technology
Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...
Tags: Green LEDs, MOCVD
Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
In a ceremony in Nagoya, Japan on 8 August, Gerald Stringfellow, who is a Distinguished Professor in the University of Utah's departments of materials science & engineering and electrical & computer engineering (and dean of the College of ...
Tags: LEDs, LED crystals