Taiwan National Tsing Hua University has used a hybrid ohmic-Schottky drain to reduce buffer leakage and improve breakdown performance in aluminium gallium nitride(AlGaN)semiconductor transistors produced on silicon substrates[Yi-Wei Lian ...
Tags: Nitride HEMTs, Silicon, Taiwan, AlGaN, Semiconductor
Taiwan-based researchers have been working to reduce nitride semiconductor high-electron-mobility transistor(HEMT)costs by developing copper interconnect structures compatible with production processes on silicon substrates[Yueh-Chin Lin et ...
Tags: HEMT, Breakdown Voltages, Copper, Gold