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Nitride HEMTs
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Higher Breakdown Voltage for FP GaN HEMTs Over Convention Field-Plate Designs
Sep 3, 2014Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
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Researchers in Taiwan Have Used a Palladium Oxide Gate Interlayer
Oct 30, 2013Researchers in Taiwan have used a palladium oxide (PdO) gate interlayer to improve nitride semiconductor high-electron-mobility transistor (HEMT) performance [Ray-Ming Lin et al, Jpn. J. Appl. Phys., vol52, p111002, 2013]. In particular, ...
Tags: HEMT MOCVD GaN, Electrical, Electronics
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NTU Has Developed a Passivation Process for Aluminium Gallium Nitride
Oct 12, 2013Singapore’s Nanyang Technological University (NTU) has developed a passivation process for aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on silicon substrates that significantly ...
Tags: Nitride HEMTs, Electrical
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SINANO Extended Its Work on Double-Gated DG-HEMTs
Jun 8, 2013Chinese Academy of Sciences’ Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) has extended its work on double-gated nitride semiconductor high-electron-mobility transistors (DG-HEMTs) [Guohao Yu et al, IEEE Electron Device ...
Tags: Nitride HEMTs, Electrical
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Xidian Developed a Nitride Semiconductor FP MIS-HEMT with 'negligible' Current Collapse
Jun 3, 2013Xidian University has developed a nitride semiconductor field-plated metal-insulator-semiconductor high-electron-mobility transistor (FP MIS-HEMT) with ‘negligible’ current collapse, along with high maximum current and enhanced ...
Tags: Silicon Nitride, Electrical
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BAE Systems and Purdue University Developed Atomic Layer Deposited (ALD) Aluminium Oxide
May 13, 2013Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
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Field Plates Are Used to Manipulate Electric Field Distributions in HEMTs
Mar 7, 2013Researchers in China and Canada have developed air-bridge field plates for nitride semiconductor high-electron-mobility transistors (HEMTs) that increase the breakdown voltage and offer more stable performance at raised temperatures [Xie ...
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IQE Claimed Record-Breaking Balanced Frequency Performance for a Nitride Semiconductor
Feb 17, 2013University of Notre Dame (UND) in the USA and epiwafer maker IQE have claimed record-breaking balanced frequency performance for a nitride semiconductor high-electron-mobility transistor (HEMT) using indium aluminium gallium nitride ...
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SINANO Has Been Using Double-Gated Nitride Semiconductor HEMTs
Feb 6, 2013Suzhou Institute of Nano-tech and Nano-bionics (SINANO) in China has been using double-gated nitride semiconductor high-electron-mobility transistors (HEMTs) to understand the effects of field-plates in improving dynamic performance [Guohao ...
Tags: SINANO, China, double-gated nitride semiconductor, HEMTs
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HfO2 Has Superior Blocking Characteristics, Surface Passivation Properties
Jan 18, 2013Seoul National University and Korea Electronics Technology Institute have been developing hafnium dioxide (HfO2) as a gate insulator for aluminium gallium nitride (AlGaN) metal-oxide-semiconductor high-electron-mobility transistors ...
Tags: HfO2, gate insulator, Lights, Lighting
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Tsing Hua University Used a Hybrid Ohmic-Schottky Drain to Reduce Buffer Leakage
Jun 29, 2012Taiwan National Tsing Hua University has used a hybrid ohmic-Schottky drain to reduce buffer leakage and improve breakdown performance in aluminium gallium nitride(AlGaN)semiconductor transistors produced on silicon substrates[Yi-Wei Lian ...
Tags: Nitride HEMTs, Silicon, Taiwan, AlGaN, Semiconductor
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The Epitaxial Structures Were Grown on Silicon Carbide Using MOCVD
Jun 21, 2012University of Notre Dame (UND) and IQE RF LLC of Somerset, NJ, USA have achieved record cut-off frequencies of 370GHz for InAlN/AlN/GaN/SiC high-electron-mobility transistors. The use of indium aluminum nitride (InAlN) barrier layers ...
Tags: Raw Material
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IEMN Has Demonstrated High-Power-Density Nitride High-Electron-Mobility Transistors
Jun 20, 201220 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...
Tags: GaN/Si HEMTs, IEMN, AlGaN
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Nitride HEMTs Are Being Developed for Power Device Applications
Jun 18, 2012Taiwan-based researchers have been working to reduce nitride semiconductor high-electron-mobility transistor(HEMT)costs by developing copper interconnect structures compatible with production processes on silicon substrates[Yueh-Chin Lin et ...
Tags: HEMT, Breakdown Voltages, Copper, Gold
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11 May 2012 Record Transconductance of 1105mS/Mm for GaN/InAIN MIS-HFET
May 11, 201211 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material