Due to their compactness and low cost of ownership, UV LEDs continue to penetrate the booming UV curing business, through replacement of incumbent technologies such as mercury lamps, according to 'UV LED - Technology, Manufacturing and ...
Ohio State University and University of Illinois at Chicago have developed deep ultraviolet (DUV) light-emitting diodes (LEDs) based on III-nitride semiconductor nanowires [Thomas F Kent et al, Nanotechnology, vol25, p455201, 2014]. The ...
Researchers based in China have found “remarkably reduced efficiency droop” from staircase (SC) thin indium gallium nitride (InGaN) quantum barrier (QB) light-emitting diodes (LEDs) [Kun Zhou et al, Appl. Phys. Lett., vol105, ...
Tags: High Current, remarkably reduced efficiency droop, Electrical
University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...
Researchers based in Singapore and Turkey have been developing a hole accelerator structure with a view to improving the performance of indium gallium nitride (InGaN) semiconductor light-emitting diodes (LEDs) [Zi-Hui Zhang et al, Appl. ...
Tags: Nitride LEDs, InGaN
Singapore's Nanyang Technological University and Turkey's Bilkent University have developed a graded multiple quantum well (MQW) structure with the aim of increasing light output power and reducing efficiency droop in 450nm indium gallium ...
Tags: LED, LED Light, Electrical, Electronics
Researchers based in Singapore and Turkey have demonstrated a last quantum barrier (LQB) structure for indium gallium nitride (InGaN) light-emitting diodes (LEDs) that improves the electron blocking and hole injection of an aluminium ...
Tags: LEDs GaN InGaN MOCVD, Electrical, Electronics, LED
Researchers in France have reported on solar cell devices based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [Sirona Valdueza-Felip et al, Appl. Phys. Express, vol7, p032301, 2014]. Conversion efficiencies of up to 2% ...
Tags: Solar Cells, InGaN
University of Notre Dame (UND) is developing gallium nitride (GaN) quantum dots in aluminium nitride (AlN) as a route to deep ultraviolet (UV) light-emitting diodes (LEDs) [Jai Verma et al, Appl. Phys. Lett., v104, p021105, 2014]. ...
Tags: UV Light Emission, LEDs
Researchers based in Korea and Egypt have used wafer thinning to increase the efficiency of nitride semiconductor green light-emitting diodes (LEDs) [Wael Z. Tawfik et al, Appl. Phys. Express, vol6, p122103, 2013]. The contributing ...
Researchers at University of California Santa Barbara (UCSB) have used low-temperature metal-organic chemical vapor deposition (MOCVD) of p-type gallium nitride (GaN) to achieve intentional surface roughening of a solar cell device, thereby ...
Tags: Ingan Solar Cell, MOCVD
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
LayTec AG of Berlin, Germany, which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications, says that its spectroscopic photoluminescence (PL) system PearL has been ...
Tags: CIGS Spectroscopic photoluminescence, Electrical, Electronics
Taiwan’s National Cheng Kung University has developed near-green light-emitting diodes (LEDs) using a new indium gallium nitride (InGaN) growth process that gives devices with a higher peak external quantum efficiency of 48.6% ...
Tags: LEDs, Near-green LEDs, InGaN MOCVD