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InGaN LEDs with Thicker Active Regions Enabled by on The Semi-Polar (30-3-1) Plane
Nov 13, 2014University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...