Atomic layer deposition (ALD) thin-film technology firm Picosun Oy of Espoo, Finland, Taiwan’s National Chiao Tung University (NCTU) and Atom Semicon Co Ltd of New Taipei City, Taiwan have begun a joint collaboration on the ...
The market for global diamond materials for semiconductor applications will rise at a compound annual growth rate (CAGR) of 19.26% over 2017-2021, forecasts a report by Technavio. Diamond materials for semiconductors are crystalline or ...
Tags: Diamond, diamond materials
Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
ebeam Technologies, a developer and manufacturer of electron beam (EB) curing systems, has added inks producer INX International to its portfolio. The companies have formed a partnership, which will boost the development of new ebeam ...
Tags: packaging, digital print
Carbonics Inc of Marina Del Rey, CA, USA has launched its ZEBRA carbon-on-silicon technology for radio frequency (RF) components and devices in wireless, communications, defense and aerospace markets. Carbonics was spun out from ...
At Semicon China 2017, executives at chip giant Intel, IC packager Advanced Semiconductor Engineering, equipment vendors ASML, Lam Research and Tokyo Electron (TEL), and nano-electronics research institute Imec talked about innovation to ...
Tags: IC, Semiconductor, IC Industry
Elif, the “Global Supplier” of the flexible packaging industry, has been named among the finalists of WorldStar 2017 with the hybrid printing technology ‘ElfHybr’, the latest ring of the chain of innovations made for ...
Tags: ElifHybr, Hybrid Printing
Printing inks manufacturer, Siegwerk has introduced new ink range for offset printing and subsequent electron beam (EB) curing suitable for flexible packaging. The new ink solution is designed to provide flexible packaging printers with ...
Tags: flexible packaging, printers
A research team led by faculty scientist Ali Javey at the US Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) has created a transistor with a gate length (the defining dimension of a transistor) just 1nm long, ...
The UK's University of Cambridge and Japan's National Institute for Materials Science have developed single-photon emission devices using layers of graphene, hexagonal boron nitride (hBN), and transition-metal dichalcogenides (TMDs) [Carmen ...
Arralis Ltd of Limerick, Ireland, which designs and manufactures RF, microwave and millimetre-wave devices, modules and antennas up to and beyond 110GHz (the W-band) for aerospace and security market, has added new monolithic integrated ...
There's a strange chip lurking beneath the surface of Apple's 3.5mm headphone adapter for the iPhone 7 and 7 Plus. iFixit, which routinely conducts teardowns of popular gadgets, partnered with Creative Electron to examine an X-ray image ...
Tags: Apple, Mobile Accessories, Headphones
Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) to include models operating at frequencies of 13.75–14.5GHz with saturated output power of 100W (50.0dBm) ...
Tags: Mitsubishi Electric, GaN HEMTs
Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...