Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
Magnetic components and assembly designer and manufacturer Precision Inc of Minneapolis, MN, USA has launched its gallium nitride (GaN)-ready magnetic capabilities. GaN-ready LLC transformers and PFC inductors are now available for ...
Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
Cree Inc of Durham, NC, USA is enhancing its support of the European market by extending its partnership with UK-based distributor APC Novacom. APC Novacom now stocks all Cree RF devices that do not require a European Union (EU) license, ...
Tags: Cree, APC, Electrical
Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
Researchers in Taiwan claim to be the first to use bumping technology to create piezoelectric-induced performance enhancement in flip-chip packaged aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) [Szu-Ping Tsai ...
Agilent Technologies Inc of Santa Clara, CA, USA has announced several innovations for the 2014 release of its suite of device modeling and characterization software tools. The suite comprises the Integrated Circuits Characterization and ...
Tags: GaN HEMTs, 3D Finfets
The need for high-power, high-frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications, notes market research firm Yole Développement in its report ‘RF GaN Technology & ...
As high-data-rate applications put more strain on LTE wireless networks, solutions such as small-cell base-stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader ...
Tags: GaN HEMTs, LTE wireless networks
Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...
Tags: Electrical, Electronics
Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions
China’s Xidian University has produced ‘normally-off’ gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a thin high-aluminium-content aluminium gallium nitride (AlGaN) barrier layer [Kai Zhang et al, ...
Tags: Xidian University, normally-off, GaN, HEMTs
Hong Kong University of Science and Technology (HKUST) has developed a 600V gallium nitride on silicon (GaN/Si) normally-off metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with large gate swing and low current ...
Tags: GaN MIS-HEMTs AlGaN, Electrical, Electronics