Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient
Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
Pasternack Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has launched a line of high-rel frequency dividers that cover wide frequency bandwidths from 0.5 to 18GHz and are available ...
University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
The innovative LED Revolution is one of the stand out pieces from Chelsom’s new collection, Edition 25. Designed by Robert and Will Chelsom as a thoroughly original and unprecedented reading light, LED Revolution will undoubtedly give ...
Tags: LED Revolution, Chelsom
University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
The payoff of Taiwanese fastener makers' effort on going upmarket is a major growth drive for the industry's sustainable development (in the photo are the high-strength, quality-approved bolts and fixings for rail construction). Although ...
Tags: Fastener, industrial parts
A new study has found that metal from the almost 5 trillion cigarette butts littered annually across the world may be leaching into the food chain. Published late last week by the online journal, Tobacco Control, Iranian scientists ...
Tags: Marine Food, Metals
Integrated passive device maker OnChip Devices Inc of Santa Clara, CA, USA says that its wafer fabrication facility is offering backside metallization (BSM) of thin films for applications such as military, medical, and instrumentation. ...
Tags: Sputtering, HB-LEDs, GaN-on-Si, Wafer bonding
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
VG New Trend present Arabesque Collection at Light + Building 2016 The Arabesque collection is perfect for the creation of striking coordinated interior design schemes with strong aesthetic and emotional impact. Versatile, always ...
Tags: VG, Arabesque collection, LED
Kulicke & Soffa Industries has launched new FCC Hub Blades, extending the successful AccuPlus series. The new FCC Hub Blades offer a customizable solution for flip chip, wafer level packaging (WLP) and thick wafer dicing with improved ...