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ON Semiconductor Extends Sic Diode Portfolio by Adding 650V Schottkys

Mar 2, 2018

ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has extended its silicon carbide (SiC) diode portfolio by ...

Tags: sensors, analog

Indium Gallium Nitride Solar Cells with Positive Temperature Coefficient

Sep 20, 2016

Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...

Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient

IXYS Launches 1200v SiC Power Mosfets in SOT227 Minibloc Packages for Higher-Power Applications

Jul 27, 2016

IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands, which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications, has announced availability of its IXFN50N120SK and IXFN70N120SK 1200V ...

Tags: power semiconductors, semiconductors, SiC Power

Bi-Directional Silicon Carbide Planar Insulated-Gate Bipolar Transistor

Jul 5, 2016

Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...

Tags: Bipolar Transistor

EDN Has Named Its C2M0025120D 1200V,25m&Omega Sic MOSFET as The 'hot 100 Products of 2014'

Dec 5, 2014

Cree Inc of Durham, NC, USA, which manufactures silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, says that EDN (Electronic Design News) has named its C2M0025120D 1200V, 25mΩ SiC MOSFET as one of the ‘Hot 100 ...

Tags: silicon carbide, gallium nitride, Electrical

CREE Has Shattered The on-Resistance Barrier of Traditional 1200V MOSFET Technology

May 15, 2014

Cree Inc of Durham, NC, USA claims to have shattered the on-resistance barrier of traditional 1200V MOSFET technology by introducing the first commercially available silicon carbide (SiC) 1200V MOSFET with an RDS(ON) of 25mΩ in an ...

Tags: Cree SiC MOSFET, Electrical, Electronics

IXYS Announced The Introduction of The SS150 and SS275 Series High-Power SiC

Aug 28, 2013

IXYS Corp, a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of the SS150 and SS275 Series high-power silicon carbide (SiC) diodes by its ...

Tags: IXYS SiC diodes, Electrical, Electronics

GeneSIC Semiconductor Has Announced The Immediate Availability of Its GB100XCP12-227

Mar 7, 2013

Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the immediate availability of its GB100XCP12-227 second-generation hybrid mini-modules using 1200V/100A SiC Schottky rectifiers ...

Tags: semiconductor supplier, semiconductor, silicon

SiC Has Announced The Availability of a Family of 1700V and 1200V SiC Junction Transistors

Feb 27, 2013

Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the availability of a family of 1700V and 1200V SiC junction transistors: three 1700V devices (the 110mΩ GA04JT17-247, ...

Tags: GeneSiC, junction transistors, power system

Ethicon Enseal G2 Articulating Tissue Sealer Is Cleared by FDA

Feb 18, 2013

The US Food and Drug Administration (FDA) has granted 510(k) approval to Ethicon Endo-Surgery's ENSEAL G2 Articulating Tissue Sealer, designed to allow surgeons to take a perpendicular approach to seal vessels up to 7mm in diameter and ...

Tags: FDA, Drug, Surgery

EPC Releases Safe Operating Area Data for Its Egan Fets

Sep 3, 2012

3 September 2012 EPC releases safe operating area data for its eGaN FETs Efficient Power Conversion Corp(EPC)of El Segundo,CA,USA,which makes enhancement-mode gallium nitride on silicon(eGaN)power field-effect transistors(FETs)used in ...

Tags: EPC, eGaN FETs, SOA

21 June 2012 Semisouth Doubles Current Rating of 1200V SiC Diodes to 10A

Jun 21, 2012

21 June 2012 SemiSouth doubles current rating of 1200V SiC diodes to 10A Picture:SemiSouth's SDB10S120 1200V/10A diodes in TO-252-2L packages. SemiSouth Laboratories Inc of Starkville,MS,USA,which designs and manufactures silicon ...

Tags: SemiSouth, SiC diodes, USA

SemiSouth Is Now Delivering The Industry's First 650V SiC JFET Power Transistors

May 16, 2012

SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide device for high-power, high-efficiency, harsh-environment power management and conversion applications) claims that, after first ...

Tags: SemiSouth, USA, manufactures

Littelfuse Adds The TMOV34S Varistor Series to Its TMOV Line of Products

May 16, 2012

Chicago – Littelfuse, Inc. (NASDAQ/NGS: LFUS), the worldwide leader in circuit protection, today announced the addition of the TMOV34S Varistor Series to its Thermally-Protected MOV (TMOV) line of products with UL1449 recognition to ...

Tags: industry, device, Operating Voltage

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