The US Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E) has announced $30m in funding for 21 projects as part of the CIRCUITS program (‘Creating Innovative and Reliable Circuits Using Inventive Topologies ...
Tags: WBG devices, electronics devices
Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...
Tags: Wolfspeed, silicon carbide
Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...
Pallidus Inc (a Melior Innovation company) of Houston, TX, USA has launched its proprietary M-SiC silicon carbide source material and technology platform, with the capability to deliver cost/performance parity against silicon devices in the ...
Tags: Silicon Carbide, Pallidus
Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched an asymmetric Doherty amplifier enabling ultra-high levels of power efficiency in the ...
Tags: Qorvo, GaN, RF, GaN-on-SiC
Tokyo-based Showa Denko K.K. (SDK) says that, by the end of January 2018, it will acquire assets from Nippon Steel & Sumitomo Metal Corp (NSSMC) and Nippon Steel & Sumikin Materials Co Ltd (NSMAT) concerning the ...
Tags: SDK, Nippon Steel
For fiscal first-quarter 2018 (ended 1 July 2017), Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has reported revenue of $639.9m, down slightly on ...
Tags: Qorvo, IDP product
Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...
Tags: semiconductor, MOCVD
Porsche has unveiled the new 2018 911 Turbo S Exclusive Series Coupe, which it claims is the most powerful 911 Turbo S ever. In addition to an increase of 27 horsepower, the 911 Turbo S Exclusive Series distinguishes itself from other 911 ...
Tags: Porsche, 911 Turbo S
Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched what it claims is the first gallium nitride on silicon carbide (GaN-on-SiC) front-end ...
Tags: silicon carbide
Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has announced broad commercial availability of four 28GHz RF products for 5G base stations. The firm ...
Tags: Qorvo, GaN, RF Products
Analog Devices Inc (ADI) of Norwood, MA, USA has launched small-form-factor isolated gate drivers designed for the higher switching speeds and system size constraints required by power switch technologies such as silicon carbide (SiC) and ...
Tags: Analog Devices, GaN Power
Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...
Tags: power modules, Semiconductor
GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – says that its transistors are being used by power ...
Tags: GaN Systems, Solar Power Inverter
Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched two new power amplifiers (PAs) including what is claimed to be the first ...
Tags: Qorvo, PAs, GaN technology