Good news, PC gamers! Nvidia has launched two new low-power graphics cards that won’t cost you the earth. The latest additions to Nvidia’s new 10-series GPUs are the GeForce GTX 1050 and 1050 Ti, both of which were extensively ...
Tags: graphics cards, Nvidia
A research team led by faculty scientist Ali Javey at the US Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) has created a transistor with a gate length (the defining dimension of a transistor) just 1nm long, ...
Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MAAP-011247 and MAAP-011248 distributed power ...
Tags: MACOM, power amplifiers
iPhone 7 problems: A guide to all the problems, bugs, glitches, issues and annoyances you might experience – and how to quickly fix them. The iPhone 7 is here, and while Apple’s latest flagship isn’t the redesign we were ...
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In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...
Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016
Everything you need to know about the Google Pixel and Pixel XL Google’s Pixel and Pixel XL phones are nearly here, so here’s everything you need to know about the Google Pixel release date, specs, features, and price. ...
Tags: Google Pixel, Pixel XL phone, HTC
iOS 10 problems: Our guide explains how to quickly fix some of the most common iOS 10 problems, annoyances, glitches and bugs, including how to maximise storage and overcome the notorious bricking issue. Here's what you need to know. iOS ...
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Tokyo-based Mitsubishi Electric Corp has developed a 220W-output gallium nitride high-electron-mobility transistor (GaN-HEMT) with what is claimed to be world-leading drain efficiency of 74% (in load-pull measurements) for 2.6GHz-band base ...
Tags: Mitsubishi Electric, GaN-HEMT
Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has added to its BroadRange family of wideband gallium arsenide (GaAs) MMIC distributed amplifiers with the 2-20GHz CMD238, suitable for military, space and ...
Tags: communications systems, Amplifier
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MAAP-011232, a two-stage, 1W driver ...
Tags: semiconductors, analog RF, Driver Amplifier
Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch