Jing Zhang, a faculty member at Rochester Institute of Technology, has received a CAREER award from the US National Science Foundation (NSF) for work to develop new, highly efficient ultraviolet light sources. Zhang’s NSF award of ...
Tags: UV LEDs, UV Photonics
Osram Opto Semiconductors GmbH of Regensburg, Germany has succeeded in reducing the typical forward voltage by about 600mV to 2.6V (at a power density of 45A/cm2) in its indium gallium nitride (InGaN)-based green direct-emitting LEDs. With ...
Tags: Osram, Green LEDs
Applied Optoelectronics Inc (AOI) of Sugar Land, TX, USA – a manufacturer of optical components, modules and equipment for fiber access networks in the Internet data-center, cable TV broadband, fiber-to-the-home (FTTH) and telecom ...
Expanding on its gallium nitride (GaN) power portfolio, Texas Instruments Inc (TI) has launched two high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such ...
Tags: GaN Power, GaN FET Drivers
Panasonic Corp of Osaka, Japan has developed an insulated-gate metal-insulator-semiconductor (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no variation in its threshold gate voltage. This makes it ...
Tags: Panasonic, Power Transistor
Plessey Semiconductors Ltd of Plymouth, UK has demonstrated how its monolithic microLED technology can be used to deliver the next-generation of head-up displays (HUDs), enabling new augmented reality (AR) and virtual reality (VR) ...
The global market for radio-frequency (RF) power semiconductor devices – spanning silicon (LDMOS), gallium arsenide (GaAs) and gallium nitride (GaN) – will increase at a compound annual growth rate (CAGR) of nearly 12% during ...
Tags: Semiconductor
Qualcomm Technologies Inc, a subsidiary of Qualcomm Inc of San Diego, CA, USA, has announced radio-frequency front-end (RFFE) design wins with leading original equipment manufacturers (OEMs) including Google, HTC, LG, Samsung and Sony ...
Metrology and inspection equipment maker Lasertec Corp of Tokyo, Japan has launched the GALOIS defect inspection and review system series, designed specifically for the inspection and analysis of gallium nitride (GaN) wafers. The firm is ...
Tags: Metrology, inspection equipment
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has received an order for multiple AIX 2800G4-TM MOCVD cluster tools from Chinese optoelectronic manufacturer Xiamen Changelight Co Ltd to expand its production ...
Tags: LED Capacity, cluster tools
SPTS Technologies Ltd of Newport, Wales, UK (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has won an ...
Tags: SPTS, GaN-on-SiC, LED
Despite revolutionizing illumination, even top-of-the-line nitride LEDs are far from their maximum efficiency when operating at the high power needed for lighting applications. Logan Williams and Emmanouil Kioupakis at the University of ...
Tags: LEDs, LED Efficiency
Working with scientists in Texas and Warsaw, researchers at Finland’s Aalto University have made a breakthrough in revising methods largely discarded 15 years ago (‘Amphoteric Be in GaN: Experimental Evidence for Switching ...
Tags: GaN Power electronics
For third-fiscal 2017, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $131.9m, up 15% on $115.1m last quarter and up 54% on $85.5m a year ago, marking the first full ...
Tags: LED market, LED Lighting
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave broadband communications systems) is presenting details of its second-generation gallium nitride (GaN)-based solid-state power amplifiers ...
Tags: Advantech Wireless, GaN technology