RF Micro Devices Inc of Greensboro, NC, USA has launched the RFPA520x series of three-stage WiFi power amplifier (PA) modules, designed for 802.11b/g/n applications. Other applications include: consumer premise equipment (CPE); picocells ...
Tags: RFMD, WiFi, RF Micro Devices, premise equipment
Skyworks Solutions Inc of Woburn, MA, USA, which manufactures analog and mixed-signal semiconductors, has launched a highly efficient, broadband, 13dB gain, gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) drive amplifier in ...
RF Micro Devices Inc of Greensboro, NC, USA says that its new RFCA1008 is a heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) amplifier designed with indium gallium arsenide (InGaP) process technology ...
Tags: RF Micro Devices, heterojunction bipolar transistor, process technology
RF Micro Devices Inc of Greensboro,NC,USA has launched a new single-stage indium gallium phosphide heterojunction bipolar transistor(InGaP HBT)power amplifier(PA)operating at frequencies of 50-2700MHz,designed specifically for wireless ...
Tags: RFMD, InGaP HBT, power amplifier, wireless infrastructure
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),Germany's Infineon Technologies AG has launched the BFx840xESD series of SiGe:C(silicon-germanium:carbon)heterojunction bipolar ...
Tags: Infineon, transistors, WiFi
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has launched what is claimed to be the first 802.11ac-ready Wi-Fi RF module for next-generation mobile devices.In addition to ...
Tags: TriQuint, Wi-Fi, Mobile Device, Download
RF Micro Devices Inc of Greensboro,NC,USA has launched the RFPA1012 linear power amplifier,designed specifically for wireless infrastructure applications. Using a gallium arsenide(GaAs)heterojunction bipolar transistor(HBT)fabrication ...