Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has launched a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) control circuit specifically designed to optimize the ...
Pure-play compound semiconductor wafer foundry Global Communication Semiconductors LLC (GCS) of Torrance, CA, USA says that its proprietary indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) D5 and P7 foundry processes ...
Tags: GCS, HBT Foundry Processes
RF Micro Devices Inc of Greensboro, NC, USA says that its new RFCA1008 is a heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) amplifier designed with indium gallium arsenide (InGaP) process technology ...
Tags: RF Micro Devices, heterojunction bipolar transistor, process technology
RF Micro Devices Inc of Greensboro,NC,USA has launched a new single-stage indium gallium phosphide heterojunction bipolar transistor(InGaP HBT)power amplifier(PA)operating at frequencies of 50-2700MHz,designed specifically for wireless ...
Tags: RFMD, InGaP HBT, power amplifier, wireless infrastructure
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17–22 June),Freescale Semiconductor of Austin,TX,USA,which provides RF power technology for cellular markets,has launched new Airfast transistors ...