Glass milling technology company, International Innovative Technologies Ltd. (IIT) has secured an order for a milling system utilising its patented fine grinding technology for waste glass recycling. IIT has signed an order to supply a ...
Researchers at Purdue and Harvard universities have developed gallium arsenide (GaAs) enhancement-mode (E-mode) surface/n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a maximum drain current of 336mA/mm, which ...
Tags: NMOSFETs, GaAs, GaAs transistor ALE
A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch
Researchers in China have developed an atomic layer deposition (ALD) technique to create distributed Bragg reflectors (DBR) for increasing nitride semiconductor light-emitting diode (LED) output power by up to 43% [Hongjun Chen et al, Appl. ...
Tags: DBR ALD MOCVD LEDs GaN, Lighting, LED
New compared to previous models is the round form of the light emitting surface (LES) of the new product generation of Sharp's Mini ZENIGATA LEDs. Due to their circular LES, modules of type GW6BxxxxHED have qualities similar to a ...
Tags: New Product News, lighting industry news, Mini Zenigata LEDs
Sharp has announced new Mega Zenigata COB LEDs with a 17-mm light-emitting surface and maximum efficacy of 108 lm/W. Sharp has introduced its new Mega Zenigata LEDs that are available in 15W, 25W, 35W and 50W versions, and offer luminous ...
Tags: Sharp, COB LEDs, Mega Zenigata
Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
LED light bulbs are increasingly being used by people all over the world as they are an energy-efficient way of illuminating the home. However, a company in Cambridge claims to have found a new way of cutting heat even further in LED ...
Cambridge Nanotherm has launched a new design of metal-backed PCB made from a ceramic dielectric which is claimed to significantly reduce LED die temperatures, in luminaire designs. The dielectric thermal conductivity of the material ...
Tags: Cambridge Nanotherm, metal-backed PCB, luminaire designs
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
Purdue and Harvard universities have produced stacked nanowire (NW) transistors with increased drive current and maximum transconductance. The results were presented on Wednesday 12 December at the International Electron Devices Meeting ...
Tags: Christmas Tree, 4d Electronics, nanowire transistors, wrap-around gates
Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...
Evonik Degussa GmbH has obtained a patent for an aluminium oxide powder in the form of aggregates of primary par-ticles,wherein each particle has a BET surface area of from 10 to 90 m2/g and is comprised of as crystalline phases,in ...
Tags: Evonik Degussa GmbH, Powder, Dispersion, Coating
There are a many reasons an application might call for titanium due to its exceptional strength-to-weight ratio. In its unalloyed form titanium is a strong as some steels yet 45% lighter. However the welding of titanium demands a more ...
Tags: titanium, strength-to-weight ratio, welding of titanium, 45%lighter
Researchers in the USA have achieved record transconductance and cut-off frequencies for indium gallium arsenide (InGaAs) channel metal-oxide field effect transistors (MOSFETs) [D.-H. Kim et al, Appl. Phys. Lett., vol101, p223507, 2012]. ...