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GaN MISFET GaN MOCVD
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Massachusetts Institute Developed an Etch Stop Technique to Improve Performance
Feb 17, 2013A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch