In 2016 a new way of producing parts will be readily available. HP has developed the Multi Jet Fusion 3D printer that will enable mass production of parts with accuracy, finer details and smoother surfaces. It will also be able to ...
Tags: HP 3D Printing, Jet Fusion
Process control and yield management solutions provider KLA-Tencor Corp of Milpitas, CA, USA has introduced the WaferSight PWG patterned wafer geometry measurement system, the LMS IPRO6 reticle pattern placement metrology system, and the ...
Tags: KLA-Tencor, process control loops
At the SEMICON West 2014 trade show in San Francisco (8-10 July), process control and yield management solutions provider KLA-Tencor Corp of Milpitas, CA, USA launched four new systems - the 2920 Series, Puma 9850, Surfscan SP5 and eDR-7110 ...
Tags: KLA-Tencor, IC Technologies
Materials, component and precision system supplier Ferrotec Corp, whose Temescal division of Livermore, CA, USA manufactures electron-beam-based evaporative coating systems, has unveiled the Temescal UEFC-4900, a mid-sized ...
Tags: Ferrotec, MID-Sized Auratus
China's Nanjing University has produced silicon carbide (SiC) avalanche photodiodes (APDs) with the lowest claimed dark count rate (DCR) at high temperatures of 150°C, compared with any other semiconductor material [Dong Zhou et al, ...
EV Group (EVG) of St Florian, Austria (a supplier of wafer bonding and lithography equipment for MEMS, nanotechnology and semiconductor applications) has shipped an EVG510 semi-automated wafer bonding system and an EVG620 automated bond ...
Tags: EV Group, wafer bonding system
Lund University has developed multi-gate (MuG) III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) with a cut-off frequency of 210GHz and a maximum oscillation frequency of 250GHz, “the highest of any reported ...
Tags: effect transistors, fins, plasma, Electrical&Electronics
The ability to locate and count small numbers of impurity atoms could lead to advances in modern electronics and optical fiber communication networks. In research published today in Physical Review Letters, physicists from Monash ...
Tags: Spectrum Imaging, Measure Atom Concentrations, Atomic Resolution
Despite skepticism in the chip industry that Moore’s Law could be reaching its limits, MIT Researchers believe that they have found a way to enable semiconductor manufacturers to continue shrinking geometries below 20 nanometer and ...
Tags: Moore's Law, MIT Research
Electron microscopy and spectroscopy are great tools for peering into matter on the molecular scale. But they’re not terribly effective if that matter happens to be biological. Researchers at the University of Illinois in Chicago ...
Tags: Clear Image, Biomolecule, liquid stage, microscope
Researchers in China have developed a selective area epitaxy (SAE) approach to create nanopyramids of nitride semiconductor 'white' light-emitting diodes (LEDs) without using phosphors [Kui Wu et al, Appl. Phys. Lett., vol103, p241107, ...
Tags: Electrical, Electronics, LED
Japan’s Tottori University has produced blue-green light-emitting diode (LED) structures using zinc sulfide telluride (ZnSTe) material [Kunio Ichino et al, Appl. Phys. Express, vol6, p112102, 2013]. The researchers see their work as ...
Singapore’s Nanyang Technological University (NTU) has developed a passivation process for aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on silicon substrates that significantly ...
Tags: Nitride HEMTs, Electrical
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK’s University of Nottingham has purchased two GENxplor R&D molecular beam epitaxy (MBE) systems for its School of Physics and ...
Tags: Optoelectronic, Electronics
Germany-based researchers claim a record on-current for an enhancement-mode (e-mode) gallium nitride (GaN) metal insulator semiconductor heterostructure field-effect transistor (MISHFET) on silicon (Si) substrate [Herwig Hahn et al, Jpn. J. ...
Tags: Electrical, Electronics, E-Mode