Japan's Panasonic Corp has reported the suppression of current collapse up to 800V for a normally-off gallium nitride (GaN) transistor by embedding a hybrid drain in a gate-injection transistor (HD-GIT) structure [Kenichiro Tanaka et al, ...
Tags: Panasonic, GaN transistor, AlGaN
Rensselaer Polytechnic Institute (RPI) in Troy, NY, USA says that Michael Shur (its Patricia W. and C. Sheldon Roberts Professor of Solid State Electronics) is to receive an Achievement award from the UK's Institution of Engineering and ...
Tags: DUV LED Research, transistor
GE announced Current, powered by GE, a first-of-its kind energy company that integrates GE’s LED, Solar, Energy Storage and Electric Vehicle businesses with its industrial strength Predix platform to identify and deliver the most cost ...
Tags: LED, GE, New Energy Businesses, Startup
GE announced recently the creation of Current, a startup that combines energy hardware with a digital backbone to make power simpler and more efficient for customers. The company, which is backed by GE’s balance sheet, brings ...
Tags: GE, Business Strategy, spin-off, Current
Jules Verne said in Around the World in 80 Days: “Anything one man can imagine, other men can make real.” Today, that is truer than ever before. Did you ever think it would be possible to communicate so easily with anyone around ...
Tags: LED streetlights, LED lighting
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
Joachim Piprek, founder & president of NUSOD Institute LLC in the USA, has run simulations that he believes eliminate electron leakage as the primary cause of efficiency droop at high current in blue light-emitting diodes (LEDs) [Appl. ...
The California NanoSystems Institute (CNSI) at University of California Los Angeles (UCLA) has demonstrated the first electroluminescence from multi-layer molybdenum disulphide (MoS2), which could lead to a new class of materials for making ...
The US Department of Energy's Oak Ridge National Laboratory (ORNL) has for the first time, it is claimed, combined a novel synthesis process with commercial electron-beam lithography techniques to produce arrays of semiconductor junctions ...
Tags: electronics, semiconductor, Heterojunctions
Carton giant Tetra Pak has launched new electron beam sterilisation technology for its filling machines. The Tetra Pak E3's Ebeam technology focuses a controlled beam of electrons onto the surface of packaging material as it runs through ...
Tags: Carton giant, Tetra Pak, Packaging
Tetra Pak has introduced a filling machine E3 for sterilising carton packaging material using electron beams. Showcased at the Fispal Technologia International Trade Show in S?o Paulo, Brazil, the new machine enables the manufacturers ...
Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
TTI now stocks in Europe Vishay’s latest PolyTan series of surface-mount polymer tantalum moulded chip capacitors in five compact case sizes. Optimized for computer, telecom, and industrial applications, the Polytech T55 series ...
Tags: AC current, devices, Electronics