M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has now shipped more than 1 million gallium nitride on ...
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
ClassOne Technology of Kalispell, MT, USA, which manufactures wet-chemical processing equipment (especially for cost-conscious users of small substrates in emerging markets), has added to its Solstice family of <200mm-wafer electroplaters ...
NXP Semiconductors N.V. of Eindhoven, The Netherlands has agreed to sell its RF Power business for $1.8bn to Jianguang Asset Management Co Ltd (JAC Capital, a subsidiary of China state-owned investment company JIC Capital). NXP's RF Power ...
Tags: RF Power Business, JAC
After a successful 2013, the market for RF power semiconductors for wireless infrastructure blew off the chart in 2014, according to a new report from market analyst firm ABI Research. The Asia-Pacific region, and China specifically, ...
RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has launched two ultra-wideband RF power gallium nitride (GaN) transistors in new plastic packages. "The industry-leading bandwidth of these two products will enable ...
Tags: GaN Transistors, Plastic Packages
Cree Inc of Durham, NC, USA has launched two gallium nitride (GaN) high-electron-mobility transistor (HEMT) RF devices that are said to solve a number of long-standing issues for radar systems employing traditional travelling wave tube ...
Tags: GaN HEMTs, TWT Amplifiers
In booth #1348 at the 2015 IEEE MTT-S International Microwave Symposium & Exhibition (IMS 2015) in Phoenix, Arizona (17-22 May), Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated ...
Tags: Microsemi, Microwave Devices
Monolithic microwave integrated circuit (MMIC) developer Custom MMIC of Westford, MA, USA added to its standard product catalog by launching a gallium nitride (GaN) low-noise amplifier (LNA) housed in a leadless 4mm x 4mm ceramic package ...
ClassOne Technology of Kalispell, MT, USA, which manufactures wet-chemical processing equipment (especially for cost-conscious emerging markets and users of smaller substrates), has delivered a fully automated Solstice S8 electroplating ...
Tags: AWSC, MMIC, Electrical
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched a 650W gallium nitride (GaN) on silicon carbide ...
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has received over $1m of orders for its redundant/phase 250W/500W Extended Ku-Band SapphireBlu gallium nitride (GaN)-based ...
Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its Technologies Group experienced more than 20% growth in 2014, marking its third consecutive year of high growth. ...
Tags: synthetic diamond solutions, emerging markets, Electrical
Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has introduced what are claimed to be the industry’s highest thermal and wideband performance GaN device with a 125W continuous wave (CW) gallium nitride on ...
Tags: Power Transistor, Electrical