During the next Mode City, from 6 to 8 July, the Fédération Française des Dentelles et Broderies will be providing a novel occasion for lingerie designers, stylists and retailers to meet or to reacquaint themselves with ...
Tags: Dentelle De Calais Lace, Apparel&Accessories, Mode City
Global insurance and reinsurance company XL Group has named Valérie Devaux - Piquer as the new casualty underwriting manager, Europe, Reinsurance, effective from 1 September 2013. Based in Paris, France, she will succeed Dieter ...
Northwestern University's Center for Quantum Devices has developed a suface-plasmon (SP) enhancement technique for ultraviolet (UV) light-emitting diodes (LEDs) produced on silicon substrates [Chu-Young Cho et al, Appl. Phys. Lett., vol102, ...
Tags: UV-LEDs, Electrical, Electronics
A transnational team of researchers has reported the first electrically pumped exciton-polariton laser device using an arsenide semiconductor microcavity [Christian Schneider et al, Nature, vol. 497, p348, 2013]. The team was variously ...
Tags: Electrical Pumping, Electrical, Electronics
LED lighting control Control characteristics of LEDs The optimum switching and dimming behaviour of LEDs makes them ideal for integration in ...
Tags: LED lighting control, ERCO
Benetton megastore Kärntner Straße Benetton megastore Kärntner Straße The new megastore of Italian fashion brand United Colors of Benetton in Vienna is presenting itself in an ...
Tags: LED Lighting, ERCO
LED Modules An LED module consists of the individual LEDs soldered onto a printed circuit board or PCB. ERCO sources the LEDs globally from ...
Tags: LED Module, ERCO
A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch
Researchers in China have developed an atomic layer deposition (ALD) technique to create distributed Bragg reflectors (DBR) for increasing nitride semiconductor light-emitting diode (LED) output power by up to 43% [Hongjun Chen et al, Appl. ...
Tags: DBR ALD MOCVD LEDs GaN, Lighting, LED
Researchers in Korea have used aluminium gallium nitride (AlGaN) heterostructures similar to high-electron-mobility transistors (HEMTs) to create Schottky barrier diodes (SBDs) with increased forward current without damaging the breakdown ...
Tags: aluminium gallium nitride, AlGaN, heterostructures, HEMTs
Researchers in the USA have developed radio frequency switches based on nitride semiconductor voltage-controlled capacitors (varactors) [F. Jahan et al, IEEE Electron Device Letters, 9 January 2013]. The team, consisting of engineers from ...
Tags: radio frequency switches, nitride semiconductor voltage, SET
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
To enhance its service to customers throughout the USA, South Korea's Femto Science Inc, which manufactures plasma cleaning systems, etching (RIE and ICP) systems and Parylene coating systems (CVD), has selected UVOTECH Systems Inc of ...
Tags: South Korean, etch, CVD, UVOTECH
Two Yale University researchers have developed epitaxial distributed Bragg reflectors (DBRs) in nitride semiconductors with reflectivities of more than 98% [Danti Chen and Jung Han, Appl. Phys. Lett., vol101, p221104, 2012]. Further, the ...
Researchers based in the USA and France have created graphene nanoribbon structures with regions that have relatively large energy bandgaps of about 0.5eV [J. Hicks et al, Nature Physics, published online 18 November 2012]. Flat graphene ...
Tags: silicon carbide, graphene, nanoribbon structures, bandgaps, energy bands