Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has received a new purchase order for indium phosphide (InP) materials worth $3.25m from a leading global substrate manufacturer. Produced by IQE’s Wafer Technology ...
Tags: Wafer Technology, Electrical
The United States Patent and Trademark Office (USPTO) has issued Solar-Tectic LLC of Briarcliff Manor, NY, USA with a patent for technology that allows the growth of single-crystal semiconductor films on inexpensive substrates such as ...
Tags: Solar Cell Technology, thin-film specialist, Electrical
Following its Manufacturing Advanced Functional Materials (MAFuMa) call issued in February, the UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded £20m to 10 new research projects that aim to advance the ...
Tags: Functional Materials, Electronics
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
Bernin-based Soitec (which makes engineered substrates and CPV systems) and Grenoble-based micro/nanotechnology R&D center CEA-Leti of France, together with the Fraunhofer Institute for Solar Energy Systems ISE of Freiburg, Germany, have ...
Tags: Solar Cell, Electrical
Semiconductor materials suppliers expect demand for high-end packaging to remain strong and buoy their sales in the fourth quarter of 2014. Ampoc Fareast and Niching Industrial have both indicated clear order visibility through the end of ...
Tags: Semiconductor, Packaging
Researchers at Chalmers University of Technology in Gothenburg, Sweden have designed a microwave circuit that has set a record transmission rate of 40Gb/s for an operating frequency of 140GHz (presented in the session ‘Breaking News ...
Cree is to participate in the 11th annual Darnell Power Forum (DPF 2014) in Richmond, VI (23-25 September). As part of Darnell’s Energy Summit 2014 (a solutions-oriented conference and exhibition event that also hosts the Green ...
Tags: Cree, Darnell Power Forum, Electronics
Epiluvac AB of Lund, Sweden says that it is now offering silicon carbide (SiC) chemical vapor deposition (CVD) epitaxy reactors in various configurations. As one of the most interesting semiconductor materials in electrical power ...
Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
IBM is investing $3bn over the next 5 years in two broad research and early-stage development programs to push the limits of chip technology needed to meet the emerging demands of cloud computing and ‘big data’ systems. The ...
Tags: IBM, Big-Data Systems
Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are best positioned to address emerging power electronics performance needs in electric vehicles (EVs), with SiC displacing silicon as early ...
Tags: Power electronics GaN SiC, Electric Vehicle, Electrical, Electronics
China's Nanjing University has produced silicon carbide (SiC) avalanche photodiodes (APDs) with the lowest claimed dark count rate (DCR) at high temperatures of 150°C, compared with any other semiconductor material [Dong Zhou et al, ...
Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its gallium nitride (GaN)-on-diamond wafers have been proven by Raytheon Company to significantly outperform ...
Tags: GaN-on-Diamond Wafers, GaN-on-SiC
Researchers at Georgia State University, the University of Leeds and China's Shanghai Jiao Tong University have developed a way to use standard semiconductors to detect light over a much broader range of wavelengths, potentially opening up ...
Tags: Electrical, Electronics