Researchers in China have improved LED power output and droop behavior in nitride semiconductor light-emitting diodes (LEDs) by including an electron-emitting layer under the active region [Jianbao Zhang et al, Appl. Phys. Express, vol5, ...
ProTek Devices™ today announced a new business line currently targeted at LED lighting manufacturers. The product line consists of individual unpackaged die available in wafer form. The die in wafer form are available as ...
Tags: LED Lighting
At three manufacturing facilities in California, Wisconsin and Florida, Precision-Paragon [P2] is building energy efficient lighting that can reduce the energy costs for lighting systems by up to 60 percent in commercial and industrial ...
RF Micro Devices Inc of Greensboro,NC,USA has launched a new single-stage indium gallium phosphide heterojunction bipolar transistor(InGaP HBT)power amplifier(PA)operating at frequencies of 50-2700MHz,designed specifically for wireless ...
Tags: RFMD, InGaP HBT, power amplifier, wireless infrastructure
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),Germany's Infineon Technologies AG has launched the BFx840xESD series of SiGe:C(silicon-germanium:carbon)heterojunction bipolar ...
Tags: Infineon, transistors, WiFi