Although the market for RF gallium arsenide (GaAs) devices (merchant and captive, but excluding foundry) rose by just 0.9% in 2016 as an anticipated drop in cellular revenue nearly offset gains in other market segments, revenue still ...
Tags: GaAs RF market, LTE
This month sees the launch in Grenoble, France of the three-year, €7.2m European Union ‘Horizon 2020’ project ModulED, which brings together 10 European research institutes, key members of the automotive-industry value ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has made available the ...
GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – has made available the GS61004B-EVBDC evaluation ...
Tags: GaN Systems, integrated circuits
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...
In-situ metrology system maker LayTec AG of Berlin, Germany recently shipped a comprehensive EpiCurve TT/Pyro 400 in-situ metrology hybrid system to an industrial customer in North America. The metrology station combines automated in-situ ...
Tags: MOCVD, GaN-on-SiC
RF gallium nitride (GaN) device revenue rose by slightly more than 23% in 2016, and will increase at a compound annual average growth rate (CAAGR) of 14.1% to $733m in 2021, forecasts the Strategy Analytics Strategic Component Applications ...
Chemical firm BASF and SoloPower Systems of Portland, OR, USA, which designs, manufactures and deploys copper indium gallium diselenide (CIGS) flexible thin-film solar technology, have launched a seamless and multi-layered roofing system ...
Following development that was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO), Tokyo-based Mitsubishi Electric Corp is to launch the MGFG5H3001, a Ka-band (26–40GHz) 8W ...
Tags: Power Transmitters, Mitsubishi
GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control – and Taiwan’s Ministry of Economic Affairs (MOEA) have ...
Tags: GaN Systems, Power Challenges
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications - has announced the availability of two ...
Tags: EPC, Wireless Power Demonstration
Solar-Tectic LLC of Briarcliff Manor, NY, USA says that the US Patent and Trademark Office has granted it US patent 15/205,316 ‘Method of Growing III-V Semiconductor Films for Tandem Solar Cells’ for high-efficiency and ...
Tags: Thin-film PV, Glass Substrate
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has shipped multiple TurboDisc EPIK 868 gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) systems to several leading Chinese ...
Tags: LED Production, LED
Nitride Semiconductor Co Ltd of Tokushima, Japan has filed a patent infringement lawsuit with the US District Court for the District of Minnesota against Digi-Key Corp (trading as Digi-Key Electronics), which sells ultraviolet ...
State University of New York (SUNY) Polytechnic Institute says that associate professor of nanoengineering Dr Woongje Sung has been selected to receive $750,000 in federal funding from the US Department of Energy (DOE) to develop silicon ...
Tags: Power Electronics Chips, Suny Poly