Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp - has added a 200W C-band gallium nitride (GaN) high-electron-mobility transistor (HEMT) to its power amplifier product family. ...
Tags: Toshiba, Power Amplifier
For first-quarter 2013, RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reported revenue of $184.2m, down 15% on $216.7m on a year ago and 21% on $233.6m last quarter. ...
Tags: TriQuint, Mobile Device
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM Tech, Power Transistor, Electrical
Electronic component distributor Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has announced availability and full design support capabilities for a new evaluation kit for a 5W gallium nitride monolithic microwave ...
Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has launched its Avionics & Radar Tech Hub, a micro-website featuring the latest news, innovations and new products related to avionics and radar applications. The ...
Tags: avionics applications, radar applications, GaN transistors
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications), has introduced a new digital phase shifter for C-Band Radar ...
Tags: M/A COM, Digital Phase Shifter, microwave, array radars, weather radars
18 October 2012 TowerJazz and UCI demo integrated 94GHz imaging transceiver with record performance in silicon Specialty foundry TowerJazz(which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek,Israel,and at its ...
Tags: TowerJazz, UCI demo, silicon technology
M/A-COM Tech launches 8W 2.5–3.5GHz power amplifier for S-band radar M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave ...
Tags: M/A-COM Tech, Lights, Lighting
Hittite Microwave Corp of Chelmsford,MA,USA(which designs and supplies analog,digital and mixed-signal RF,microwave and millimeter-wave ICs,modules and subsystems as well as instrumentation)has launched two new power amplifiers suited to ...
Product announcements during the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada in late June highlighted how military applications will continue to grow and drive the fundamental development of semiconductor ...
Tags: Military, development, IMS
AWR Corp of El Segundo,CA,USA,a supplier of electronic design automation(EDA)software for designing RF and high-frequency components and systems,has expanded its AWR Design Forum(ADF)2012 Asia Pacific tour to include two stops in ...
Tags: AWR, EDA, ADF, design forum
20 June 2012 Toshiba launches high-gain,high-power X-band GaN hybrid IC supporting AESA&PESA radar In booth 2710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...
Tags: Toshiba, GaN HEMT, AESA&PESA radar, IMS 2012
Cree Inc of Durham,NC,USA has announced the sample release of a high-efficiency unmatched gallium nitride(GaN)high-electron-mobility transistor(HEMT)for military and commercial S-band radar applications. Rated at 60W for frequencies of ...
Tags: GaN, HEMT, High-Efficiency, Radar
M/A-COM Technology Solutions Inc of Lowell,MA,USA(which makes analog semiconductors,components and subassemblies for RF,microwave and millimeter-wave applications)has launched a 6-bit addition to its family of digital phase shifters for ...
Tags: MACOM Tech, USA, GaAs, CMOS
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE