Samsung’s Galaxy S8 has the potential to be way more powerful (or have a much better battery life) than its predecessor thanks to brand new chip technology. Starting today, Samsung is manufacturing the industry’s first chips ...
Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, today announced that it has commenced mass production of System-on-Chip (SoC) products with 10-nanometer (nm) FinFET technology for which would make it ...
Tags: FinFET Technology, Nanometer
A research team led by faculty scientist Ali Javey at the US Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) has created a transistor with a gate length (the defining dimension of a transistor) just 1nm long, ...
America’s off-road truck leader, Ram has introduced the Ram Rebel TRX concept. Ripping over pavement at speeds greater than 100 mph is an experience, but the Ram Rebel TRX concept hits triple digits in an off-road environment with ...
Tags: Ram, Ram Rebel TRX concept
A master supply agreement has established e2v inc of Milpitas, CA, USA (which provides solutions, sub-systems and components to the medical & science, aerospace & defense and commercial & industrial markets) as the global supplier of 100V ...
Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) to include models operating at frequencies of 13.75–14.5GHz with saturated output power of 100W (50.0dBm) ...
Tags: Mitsubishi Electric, GaN HEMTs
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first 10-nanometer (nm) class* , 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and ...
Tags: Samsung, 10nm-class DRAM, DDR4
Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
In booth #207 at European Microwave Week (EuMW 2016) at ExCel London, UK (4–6 October), MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...
For decades, researchers have tried to harness the unique properties of carbon nanotubes (CNTs) to create high-performance electronics that are faster or consume less power — resulting in longer battery life, faster wireless ...
Tokyo-based Mitsubishi Electric Corp has developed a 220W-output gallium nitride high-electron-mobility transistor (GaN-HEMT) with what is claimed to be world-leading drain efficiency of 74% (in load-pull measurements) for 2.6GHz-band base ...
Tags: Mitsubishi Electric, GaN-HEMT
Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
Dialog Semiconductor plc of London, UK, a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology, has announced its first gallium nitride (GaN) power IC ...
Tags: GaN, Dialog Semiconductor plc, SSL
Pasternack Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has launched a line of high-rel frequency dividers that cover wide frequency bandwidths from 0.5 to 18GHz and are available ...