University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
Japan's Toyoda Gosei Co Ltd has developed vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) capable of handling 50A forward current with 790V reverse blocking [Nariaka Tanaka et al, Appl. Phys. Express, vol8, p071001, 2014]. "To ...
Tags: Vertical Schottky barrier, power supply, diodes Free standing
University of California Santa Barbara (UCSB) in the USA has improved hole concentrations in p-type gallium nitride (p-GaN) by using indium as a surfactant in ammonia-based molecular beam epitaxy (NH3MBE) [Erin C. H. Kyle et al, Appl. Phys. ...
Tags: Gallium Nitride, Indium Surfactant
Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
A team at IBM Research's Zurich Research Laboratory in Rüschlikon, Switzerland, with support from the firm's T. J. Watson Research Center in Yorktown Heights, New York, has developed what it says is a relatively simple, robust and ...
Tags: IBM III-Vs-on-Si, Electrical, Electronics, IBM
Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...
Tags: plastic fiber, Electronics
Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
University of California Los Angeles (UCLA) has developed gallium antimonide (GaSb) thermophotovoltaic (TPV) cells on gallium arsenide (GaAs) substrates [Bor-Chau Juang et al, Appl. Phys. Lett., vol106, p111101, 2015]. The use of GaAs ...
Tags: TPV devices, lattice mismatch, Electronics
Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...
Zhejiang University in China and University of Cambridge in the UK have jointly developed ultraviolet light-emitting diodes (UV-LEDs) based on metal-semiconductor Schottky junctions between silver nanowires (AgNWs) and gallium nitride (GaN) ...
Researchers from Germany and the UK claim record long wavelengths of 7μmfor interband cascade lasers (ICLs) based on indium arsenide (InAs) heterostructures [Matthias Dallner et al, Appl. Phys. Lett., vol106, p041108, 2015]. Devices with ...
Researchers in Korea have used spin-coated silver nanowires (Ag NWs) to improve the performance of indium gallium nitride light-emitting diodes (InGaN LEDs) [Gyu-Jae Jeong et al, Appl. Phys. Lett., vol106, p031118, 2015]. The team based at ...
Tags: Spin-Coating, InGaN LEDs
McGill University in Canada claims to have created the first electrically injected rolled-up semiconductor tube laser [M. H. T. Dastjerdi et al, Appl. Phys. Lett., vol106, p021114, 2015]. Although rolled-up heterostructure lasers have been ...
Tags: optical pumping, tube lasers, Electrical