PAMBE GaN InN InGaN Silicon substrate

A Low-Temperature PAMBE Process for Direct Growth of InGaN on Silicon Substrates
Mar 24, 2015
Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...

Tags: PAMBE GaN InN InGaN Silicon substrate