RF Micro Devices Inc of Greensboro,NC,USA has launched a new single-stage indium gallium phosphide heterojunction bipolar transistor(InGaP HBT)power amplifier(PA)operating at frequencies of 50-2700MHz,designed specifically for wireless ...
Tags: RFMD, InGaP HBT, power amplifier, wireless infrastructure
Mitsubishi Electric to sample SiC power modules for more compact,efficient electronic equipment Tokyo-based Mitsubishi Electric Corp says that,at the end of July,it will begin shipping samples of five kinds of silicon carbide(SiC)-based ...
Tags: Mitsubishi Electric, SiC power modules, electronic equipment
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),Germany's Infineon Technologies AG has launched the BFx840xESD series of SiGe:C(silicon-germanium:carbon)heterojunction bipolar ...
Tags: Infineon, transistors, WiFi
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has launched what is claimed to be the first 802.11ac-ready Wi-Fi RF module for next-generation mobile devices.In addition to ...
Tags: TriQuint, Wi-Fi, Mobile Device, Download
RF Micro Devices Inc of Greensboro,NC,USA has launched the RFPA1012 linear power amplifier,designed specifically for wireless infrastructure applications. Using a gallium arsenide(GaAs)heterojunction bipolar transistor(HBT)fabrication ...