HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...
Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...
The Fédération des Chambres de Commerce du Québec (FCCQ) for Innovation and International Market Development has named Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave ...
Tags: GaN HEMT
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched the 2500-G Series 50W Ku-band gallium nitride (GaN)-based airborne-grade solid-state power block/block up-converter ...
Tags: GaN HEMT, Advantech Wireless
UK-based Cobham plc (which designs and manufactures equipment, specialized systems and components for the aerospace, defense, energy and electronics industries) has established a strategic partnership to incorporate the gallium nitride ...
At the Pittcon conference in Atlanta (6-10 March), laser-based trace gas analyzer manufacturer Tiger Optics LLC of Warrington, PA, USA exhibited the new ALOHA+ H2O analyzer, which refines the detection of moisture in ammonia to levels down ...
Tags: Tiger Optics, Analyser, HB LED
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that UK-based Plessey Semiconductors Ltd has ordered an AIX G5+ C cluster system (for delivery in third-quarter 2016) to expand its production capacity for ...
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched the second-generation 500W, 4.4–5.0GHz gallium nitride (GaN)-based solid-state power amplifier (SSPA). The ...
Tags: GaN HEMT
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that its GS66508P gallium nitride power transistors were ...
Tags: GaN Systems, E-mode GaN FETs, Power electronics inverters
The open-access paper The role of photonics in energy, authored by a team including Zakya Kafafi of Lehigh University, editor of the Journal of Photonics for Energy, traces the development of the science of light from the Arab scholar Ibn ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, together with the Centre for Power Electronics of the UK's ...
Tags: GaN Systems, power electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has expanded its video library on GaN ...
Tags: EPC, E-mode GaN FETs, GaN-on-Si
A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with ...
Tags: GaN p-n junction diodes, GaN Power Switches, solid-state lighting
The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...
Tags: GaN Systems, E-mode GaN FETs, TSMC