Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched a 650W gallium nitride (GaN) on silicon carbide ...
Skysilicon Co Ltd of Chong Qing City, China (which makes discrete power devices and power ICs, MEMS sensors and compound semiconductor devices) has released what is reckoned to be China's first gallium nitride (GaN) power device ...
Tags: GaN-on-Si MISHEMTs, Electronics
UK-based Plessey says that EDN (Electronic Design News) has named its smallest packaged gallium nitride on silicon MaGIC (Manufactured on GaN-on-Si I/C) high-brightness LEDs, the dotLED, as one of the Hot 100 Products of 2014. Chosen by ...
Tags: white LED, Electrical
In stand D31 at LuxLive (the UK's biggest lighting show) at ExCel London (19-20 November), Plessey of Plymouth, UK is presenting the results of its partnership with Litecool Ltd of Sheffield, UK (which manufactures heat management solutions ...
Tags: LED lighting products, LED diodes
In stand D31 at LuxLive (the UK’s biggest lighting show) at ExCel London (19-20 November), Plessey of Plymouth, UK is presenting the results of its partnership with Zeta Specialist Lighting of Bicester, UK, showcasing Zeta’s ZD ...
Tags: LED Lighting Products, Electrical
UK-based Plessey has announced the realization of high-volume, large-die LED performance based on its gallium nitride on silicon MaGIC (Manufactured on GaN-on-Si I/C) high-brightness LED (HBLED) technology. The large die benefits from ...
Tags: LED Technology, LEDs
UK-based Plessey has announced a further move to aligning operations to its expanding facility in Plymouth by adding an LED assembly line. The line should enable the firm to focus on its high-brightness LED growth plans based around its ...
Tags: Plessey, Assembly Line, Electrical
RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA says that it is the first gallium nitride (GaN) RF chip maker to achieve Manufacturing Readiness Level (MRL) 9, meaning that its GaN manufacturing processes have ...
Tags: TriQuint, GaN, front-end component
LatticePower Corp of Nanchang, China, which claims to be the first company to commercialize GaN-on-silicon LED lighting, has announced an $80m initial round of Series D equity financing led by Asia Pacific Resources Development Investment ...
Tags: GaN-on-silicon, LED lighting
Some says “if it can be made on Silicon, it will be made on silicon”. Is that true for GaN too? And if so, can it be applied in all GaN-based applications: LED, power, RF and laser?… Yole Développement (Yole) ...
Tags: GaN-on-Si, Power Electronics
Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has obtained a sole worldwide license to Furukawa Electric Co Ltd's extensive gallium nitride (GaN) power device ...
Tags: Transphorm GaN-on-Si GaN HEMT, power conversion devices, power modules
At the 39th annual Government Microcircuit Applications and Critical Technology (GOMACTech 2014) conference in Charleston, SC, USA (3 April), Alex Lidow, CEO & co-founder of Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, ...
Tags: DC-DC Converter, EPC
RF Micro Devices Inc of Greensboro, NC, USA has signed a $9.7m agreement with the Manufacturing and Industrial Technologies Directorate within the US Air Force Research Laboratory (AFRL) to transfer and produce a 0.14μm gallium nitride ...
Tags: RF Micro Devices, GaN technology
Gallium nitride (GaN)-on-sapphire is the existing mainstream technology for LED manufacturing, but GaN-on-silicon technology has naturally appeared as an alternative to sapphire in order to reduce cost. However, a cost simulation by market ...
Tags: GaN-on-Si, GaN power electronics, LED